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KZ TECHNOLOGY (HONGKONG) LIMITED
Spot supplier in China,YJDN TECHNOLOGY CO., Ltd was established in 2008. One of the largest electronic components distributors in Hongkong and Shenzhen, China.YDJN provides a full range of services
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SIHG22N60E-GE3 Field Effect Transistor Transistors FETs MOSFETs Single

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SIHG22N60E-GE3 Field Effect Transistor Transistors FETs MOSFETs Single

Part Number : SIHG22N60E-GE3

Manufacturer : Vishay Siliconix

Description : MOSFET N-CH 600V 21A TO247AC

Category : Transistors - FETs, MOSFETs - Single

Family : Transistors - FETs, MOSFETs - Single

Place of Origin : Original

MOQ : Negotiable

Price : Negotiable

Delivery Time : Negotiable

Payment Terms : T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 100000

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SIHG22N60E-GE3 Specifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On,Min Rds On) -
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1920pF @ 100V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 227W (Tc)
Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

SIHG22N60E-GE3 Packaging

Detection

SIHG22N60E-GE3 Field Effect Transistor Transistors FETs MOSFETs SingleSIHG22N60E-GE3 Field Effect Transistor Transistors FETs MOSFETs SingleSIHG22N60E-GE3 Field Effect Transistor Transistors FETs MOSFETs SingleSIHG22N60E-GE3 Field Effect Transistor Transistors FETs MOSFETs Single


China SIHG22N60E-GE3 Field Effect Transistor Transistors FETs MOSFETs Single factory

SIHG22N60E-GE3 Field Effect Transistor Transistors FETs MOSFETs Single Images

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